<p>The present invention is a method of forming a step shape pattern. According to the method, an etching target layer is formed on a substrate. Photoresist patterns which have different photoresist properties are alternately stacked on the etching target layer. A photoresist structure which has an edge part of a step shape is formed. The etching target layer is etched by using the photoresist structure as an etching mask to form a step shape pattern. By doing so, the number of etching processes is reduced and thereby the step shape pattern can be formed by a simple process.</p>
申请公布号
KR20140061879(A)
申请公布日期
2014.05.22
申请号
KR20120129045
申请日期
2012.11.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, CHUL HO;KANG, MOON JONG;KIM, BONG CHEOL;PARK, CHO RONG;LEE, DAE YOUP;LEE, SANG HO;LEE, JAE HAN