| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technique that further improves absorption of light in a semiconductor layer.SOLUTION: A photoelectric conversion device 10 includes a photoelectric conversion layer 14 having a first semiconductor layer 12 of one conductivity type. The photoelectric conversion layer 14 has a plurality of first columnar portions 20 formed on a rear surface 18 side at the opposite side of a light-receiving surface 16, and an insulating portion 22 provided so as to surround side surfaces of the plurality of columnar portions 20 and having a smaller refractive index than the first columnar portions 20. Each first columnar portion 20 has a diameter or a diagonal shorter than a wavelength of at least a part of light transmitted through the first semiconductor layer 12, and has a second semiconductor layer 24 of the opposite conductivity type to the first semiconductor layer 12.</p> |
