| 摘要 |
A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one InxGa1−xN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one InxGa1−N layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer. |
