发明名称 |
PROGRAMMING METHOD FOR NAND FLASH MEMORY DEVICE TO REDUCE ELECTRONS IN CHANNELS |
摘要 |
In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described. |
申请公布号 |
US2014140129(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201314081222 |
申请日期 |
2013.11.15 |
申请人 |
POWERCHIP TECHNOLOGY CORPORATION;POWERCHIP CORPORATION |
发明人 |
MIIDA TAKASHI;SHIROTA RIICHIRO;ARAKAWA HIDEKI;YANG CHING SUNG;LIN TZUNG LING |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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