| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting device with improved light intensity per unit area.SOLUTION: There is provided a light-emitting device including a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second light-emitting element includes a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second light-emitting layer. The second semiconductor layer is disposed between the third semiconductor layer and the first light-emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the second semiconductor layer. The second light-emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. At least a part of first light emitted from the first light-emitting layer passes through at least a part of the second light-emitting element, and is emitted to the external of the second light-emitting element. |
