SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device appropriate for reducing interference between stacked floating gates; and provide a manufacturing method of the semiconductor device.SOLUTION: A device comprises: a channel film CH which projects from a substrate SUB and has projections P on side walls; floating gates FG which surround the channel film CH and each is formed between the projections P; control gates CG which surround the floating gates FG and which are stacked along the channel film CH; and interlayer insulation films 13 each sandwiched between the stacked control gates CG. A lateral face of the floating gate FG and a lateral face of the projection P have a level difference k.