发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfO2 layer the protecting layer through RF sputtering. |
申请公布号 |
US2014138700(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201314028135 |
申请日期 |
2013.09.16 |
申请人 |
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION |
发明人 |
SEOK OGYUN;AHN WOOJIN;HAN MIN-KOO |
分类号 |
H01L29/51;H01L21/02;H01L29/66;H01L29/778;H01L29/78 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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