发明名称 |
PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
It is the gist of the present invention to provide a photovoltaic device in which a single crystal semiconductor layer provided over a substrate having an insulating surface or an insulating substrate is used as a photoelectric conversion layer, and the single crystal semiconductor layer is provided with a so-called SOI structure where the single crystal semiconductor layer is bonded to the substrate with an insulating layer interposed therebetween. As the single crystal semiconductor layer having a function as a photoelectric conversion layer, a single crystal semiconductor layer obtained by separation and transfer of an outer layer portion of a single crystal semiconductor substrate is used. |
申请公布号 |
EP2135295(A4) |
申请公布日期 |
2014.05.21 |
申请号 |
EP20080739371 |
申请日期 |
2008.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ARAI, YASUYUKI |
分类号 |
H01L31/18;H01L31/068;H01L31/075 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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