发明名称 PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 It is the gist of the present invention to provide a photovoltaic device in which a single crystal semiconductor layer provided over a substrate having an insulating surface or an insulating substrate is used as a photoelectric conversion layer, and the single crystal semiconductor layer is provided with a so-called SOI structure where the single crystal semiconductor layer is bonded to the substrate with an insulating layer interposed therebetween. As the single crystal semiconductor layer having a function as a photoelectric conversion layer, a single crystal semiconductor layer obtained by separation and transfer of an outer layer portion of a single crystal semiconductor substrate is used.
申请公布号 EP2135295(A4) 申请公布日期 2014.05.21
申请号 EP20080739371 申请日期 2008.03.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO, LTD. 发明人 YAMAZAKI, SHUNPEI;ARAI, YASUYUKI
分类号 H01L31/18;H01L31/068;H01L31/075 主分类号 H01L31/18
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