METHOD FOR FORMING CONDUCTIVE FILM, THIN FILM TRANSISTOR, PANEL WITH THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film 25 containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film 25 has high adhesion to a silicon layer 23 and a glass substrate 22 and is hardly peeled off from the substrate 22. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film 25 formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.