METHOD OF BONDING A SEMICONDUCTOR DEVICE TO A SUPPORT SUBSTRATE

摘要

A method according to embodiments of the invention includes providing a wafer of semiconductor devices grown on a growth substrate. The wafer of semiconductor devices has a first surface and a second surface opposite the first surface. The second surface is a surface of the growth substrate. The method further includes bonding the first surface to a first wafer and bonding the second surface to a second wafer. In some embodiments, the first and second wafer each have a different coefficient of thermal expansion than the growth substrate. In some embodiments, the second wafer may compensate for stress introduced to the wafer of semiconductor devices by the first wafer.