THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device (1) including a thin film electrode (7) which has an underlayer (7A) and a main electrode layer (7B) formed on the underlayer (7A), the underlayer (7A) is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer (7B) is formed of tungsten having a crystalline structure with a wavy-like surface morphology.