ITO SOL-GEL, METHOD OF MANUFACTURING ITO LAYER USING THE SOL-GEL, AND LIGHT-EMITTING DIODES AND OPTICAL SEMICONDUCTOR DEVICE

摘要

The present invention relates to a composition for forming an ITO, a thin film forming method, a light emitting diode, and an optical semiconductor device using the same and, more specifically, to a method which coats a material which has a crystal structure such as an ITO on a substrate after adding the material to ITO sol-gel solution in a powder form and forms an electrode thereon. The present invention manufactures ITO sol-gel which contains a dopant by mixing and dissolving SnCl_2, an ethanol solution, In(NO_3), acetyl acetone, and a dopant material; forms an ITO thin film by coating the ITO sol-gel including the dopant on the substrate; and forms an n-type electrode and a p-type electrode by having the ITO thin film as a transparent electrode. According to the present invention, the ITO thin film which has a small surface resistance without the damage of a pattern shape by enabling the ITO sol-gel to easily form crystallinity around the dopant material even by a heat treatment of a low temperature by adding a material having a crystal structure like ITO to the ITO sol-gel solution.