发明名称 |
METHOD OF MANUFACTURING LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM |
摘要 |
Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500 DEG C or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors. <IMAGE> |
申请公布号 |
EP1489654(B1) |
申请公布日期 |
2014.05.21 |
申请号 |
EP20030705304 |
申请日期 |
2003.02.19 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;HOYA CORPORATION |
发明人 |
HOSONO, HIDEO;HIRANO, MASAHIRO;OTA, HIROMICHI;ORITA, MASAHIRO;HIRAMATSU, HIDENORI;UEDA, KAZUSHIGE |
分类号 |
C30B1/02;C30B29/22;C09K11/00;C09K11/08;C09K11/84;C09K11/88;C30B23/02;C30B33/00;C30B33/02;H01L21/205;H01L21/363;H01L21/365;H01L29/24;H01L33/26 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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