| 摘要 |
PROBLEM TO BE SOLVED: To provide heat treatment equipment can improve within-wafer nonuniformity in temperature distribution on a substrate in heat treatment. SOLUTION: Toward the substrate W held by a holding section 2, light is radiated from a first photoirradiation section 3 to perform preheating treatment, and a flash is irradiated from a second photoirradiation section 4 to perform flash heating treatment. Furthermore, light is radiated toward a specific region on the substrate W from a lamp 61 for adjustment arranged at a height position separated from the height position of the upper surface of the substrate held by the holding section 2 by a separation distance H on the inner wall surface of a chamber side section 51. Light is radiated to a region that easily becomes a cold spot, thus suppressing the occurrence of the cold spot, and hence improving within-wafer nonuniformity in temperature distribution. COPYRIGHT: (C)2010,JPO&INPIT |
