| 摘要 |
A monolithic integrated semiconductor structure includes: A) an Si carrier layer, B) a layer having the composition BxAlyGazNtPv, wherein x=0−0.1, y=0−1, z=0−1, t=0−0.1 and v=0.9−1, C) a relaxation layer having the composition BxAlyGazInuPvSbw, wherein x=0−0.1, y=0−1, z=0−1, u=0−1, v=0−1 and w=0−1, wherein w and/or u is on the side facing toward layer A) or B) smaller than, equal to, or bigger than on the side facing away from layer A) or B) and wherein v=1−w and/or y=1−u−x−z, and D) a group III/V, semiconductor material. The sum of the above stoichiometric indices for all group III elements and for all group V elements are each equal to one. |
