| 摘要 |
<p>An atomic layer depositing device includes a substrate support rod, a shower head, a shower head reciprocating device, and a gas supply control device. The shower head reciprocating device reciprocates the shower head and the gas supply control device coats a first and second reaction layers on a substrate by turns by repeating a step of simultaneously spraying purge gas and a reaction precursor and a step of simultaneously spraying the purge gas and a fuel precursor through the shower head. The sprayed precursors and the purge gas are immediately exhausted through the shower head. The atomic layer depositing device provided by the present invention prevents the fuel precursor and the reaction precursor from being mixed with each other as the spray of the fuel precursor and the reaction precursor are not performed at the same time. It increases throughput by performing the spray of the precursor and the purge gas, and the exhaust at the same time. It can be applied to a large substrate and reduce its size by minimizing a reciprocating distance of the shower head. In addition, an atomic layer can be selectively deposited on a specific part of the substrate without using a shadow mask.</p> |
