| 摘要 |
The present invention provides nanostructured MOS capacitor that comprises a nanowire (2) at least partly enclosed by a dielectric layer (5) and a gate electrode (4) that encloses at least a portion of the dielectric layer (5). Preferably the nanowire (2) protrudes from a substrate (12). The gate electrode (4) defines a gated portion (7) of the nanowire (2), which is allowed to be fully depleted when a first predetermined voltage is applied to the gate electrode (4). A method for providing a variable capacitance in an electronic circuit by using such an nanostructured MOS capacitor is also provided. Thanks to the invention it is possible to provide a MOS capacitor having an increased capacitance modulation range. It is a further advantage of the invention to provide a MOS capacitor which has relatively low depletion capacitance compared to prior art MOS capacitances. |
