| 摘要 |
A light emitting device having a decreased number of hetero-junction interfaces through forming charge generation 220 and electron transporting 212 layers using the same material and thus having reduced driving voltage. The light emitting device includes first and second electrodes 242, 244 facing each other on a substrate 100, a plurality of stacks stacked between the first and second electrodes and each including an emitting layer so as to emit particular light, and a charge generation layer formed between the stacks including an N-type charge generation layer 220a and a P-type charge generation layer 220b. The N-type charge generation layer may be doped with alkaline or alkaline earth metals. The concentration of the doping metals may be graded and may increase towards the P-type generating layer. The light emitting device may be driven by a thin film transistor connected to the first electrode via holes in an insulating film. |
