| 摘要 |
An organic thin film transistor and a manufacturing method thereof are provided to improve adhesion between source/drain electrode and a gate insulating layer by preparing a transparent electrode pattern between the source/drain electrode and the gate insulating layer. A gate insulating layer(103) is formed in the substrate with a gate electrode(102). A transparent electrode pattern(104) is formed on the gate insulating layer to expose a part of the gate insulating layer. A source electrode(105) and a drain electrode(106) are formed on the transparent electrode pattern. A partition pattern(107) is formed on the source electrode and the drain electrode to expose the part of the gate insulating layer. The active layer is formed on the substrate. |
