发明名称 |
Temporary storage circuit, storage device, and signal processing circuit |
摘要 |
A temporary storage circuit including a reduced number of transistors is provided. The temporary storage circuit includes storage elements, each of which includes a first transistor and a second transistor. A channel of the first transistor is formed in an oxide semiconductor layer. A signal potential corresponding to data is input to a gate of the second transistor through the first transistor which is turned on by a control signal input to a gate of the first transistor. Then, the first transistor is turned off by a control signal input to the gate of the first transistor, so that the signal potential is held in the gate of the second transistor. When one of a source and a drain of the second transistor is set to a first potential, the state between the source and the drain of the second transistor is detected, whereby the data is read out. |
申请公布号 |
US8730730(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201213356726 |
申请日期 |
2012.01.24 |
申请人 |
KOYAMA JUN;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;YAMAZAKI SHUNPEI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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