| 摘要 |
A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer. |
