发明名称 Gap fill integration
摘要 Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.
申请公布号 US8728958(B2) 申请公布日期 2014.05.20
申请号 US20100964110 申请日期 2010.12.09
申请人 ASHTIANI KAIHAN;WOOD MICHAEL;DREWERY JOHN;SHODA NAOHIRO;VAN SCHRAVENDIJK BART;NITTALA LAKSHMINARAYANA;DRAEGER NERISSA;NOVELLUS SYSTEMS, INC. 发明人 ASHTIANI KAIHAN;WOOD MICHAEL;DREWERY JOHN;SHODA NAOHIRO;VAN SCHRAVENDIJK BART;NITTALA LAKSHMINARAYANA;DRAEGER NERISSA
分类号 H01L21/31;H01L21/469 主分类号 H01L21/31
代理机构 代理人
主权项
地址