发明名称 |
Semiconductor light emitting device and manufacturing method of the same |
摘要 |
The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds. |
申请公布号 |
US8729575(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113215628 |
申请日期 |
2011.08.23 |
申请人 |
HWANG JONGIL;HUNG HUNG;HATTORI YASUSHI;HASHIMOTO REI;SAITO SHINJI;TOHYAMA MASAKI;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HWANG JONGIL;HUNG HUNG;HATTORI YASUSHI;HASHIMOTO REI;SAITO SHINJI;TOHYAMA MASAKI;NUNOUE SHINYA |
分类号 |
H01L33/00;H01L31/072 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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