| 摘要 |
Embodiments of the invention include methods of forming borderless contacts for semiconductor transistors. Embodiments may include providing a transistor structure including a gate, a spacer on a sidewall of the gate, a hard cap above the gate, a source/drain region adjacent to the spacer, and an interlevel dielectric layer around the gate, forming a contact hole above the source/drain region, forming a protective layer on portions of the hard cap and of the spacer exposed by the contact hole; deepening the contact hole by etching the interlevel dielectric layer while the spacer and the hard cap are protected by the protective layer, so that at least a portion of the source/drain region is exposed by the deepening of the contact hole; removing the protective layer; and forming a metal contact in the contact hole. |
