发明名称 |
Semiconductor memory device |
摘要 |
An object is to provide a semiconductor memory device that enables low power consumption of a memory cell of a CAM including a nonvolatile memory device. Another object is to provide a semiconductor memory device without degradation due to repeated data writing. Still another object is to provide a nonvolatile memory device that enables high density of memory cells. A semiconductor memory device is provided which includes a memory circuit including a first transistor including an oxide semiconductor in a semiconductor layer, and a capacitor in which a potential corresponding to written data can be retained by turning off the first transistor; and a reference circuit for referring the written potential. The semiconductor memory device enables a high-speed search function by obtaining the address of data generated by detecting the conducting state of a second transistor in the reference circuit. |
申请公布号 |
US8729545(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201213454437 |
申请日期 |
2012.04.24 |
申请人 |
TAKAHASHI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAHASHI YASUYUKI |
分类号 |
H01L27/108;G11C7/12;G11C7/16;H01L29/26 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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