发明名称 |
Tensile strained semiconductor photon emission and detection devices and integrated photonics system |
摘要 |
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. |
申请公布号 |
US8731017(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113209186 |
申请日期 |
2011.08.12 |
申请人 |
CLIFTON PAUL A.;GOEBEL ANDREAS;GAINES R. STOCKTON;ACORN TECHNOLOGIES, INC. |
发明人 |
CLIFTON PAUL A.;GOEBEL ANDREAS;GAINES R. STOCKTON |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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