Fabrication of MOS device with integrated Schottky diode in active region contact trench

摘要

Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer, having a body top surface and a body bottom surface; forming a source; forming an active region contact trench that extends through the source and the body into the drain, wherein bottom surface of the active region contact trench is formed to include at least a portion that is shallower than the body bottom surface; and disposing a contact electrode within the active region contact trench.