发明名称 |
Active matrix substrate and method for manufacturing the same |
摘要 |
An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11a) and the signal lines (16a), and each including a semiconductor layer (4a); and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a). |
申请公布号 |
US8729612(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201013515571 |
申请日期 |
2010.12.07 |
申请人 |
KATSUI HIROMITSU;NAKAMURA WATARU;SHARP KABUSHIKI KAISHA |
发明人 |
KATSUI HIROMITSU;NAKAMURA WATARU |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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