发明名称 Active matrix substrate and method for manufacturing the same
摘要 An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11a) and the signal lines (16a), and each including a semiconductor layer (4a); and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a).
申请公布号 US8729612(B2) 申请公布日期 2014.05.20
申请号 US201013515571 申请日期 2010.12.07
申请人 KATSUI HIROMITSU;NAKAMURA WATARU;SHARP KABUSHIKI KAISHA 发明人 KATSUI HIROMITSU;NAKAMURA WATARU
分类号 H01L31/062 主分类号 H01L31/062
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