发明名称 |
Multi-direction design for bump pad structures |
摘要 |
An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction. |
申请公布号 |
US8729700(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201313899216 |
申请日期 |
2013.05.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIH-HUA;CHEN CHEN-SHIEN;KUO CHEN-CHENG;LIU TZUAN-HORNG |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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