发明名称 Semiconductor device and a method of manufacturing the same
摘要 A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.
申请公布号 US8728834(B2) 申请公布日期 2014.05.20
申请号 US201213540445 申请日期 2012.07.02
申请人 CHANG YUAN-HSIAO;PHOSTEK, INC. 发明人 CHANG YUAN-HSIAO
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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