发明名称 |
Method for manufacturing semiconductor optical modulator and semiconductor optical modulator |
摘要 |
A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer. |
申请公布号 |
US8731344(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201213478280 |
申请日期 |
2012.05.23 |
申请人 |
YAGI HIDEKI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YAGI HIDEKI |
分类号 |
G02B6/12;B23B9/04;B29D11/00;G02B6/10;G02F1/015;H01L21/302;H01L21/36 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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