发明名称 METHOD FOR DETERMINATION OF THERMAL RESISTANCE FOR JUNCTION FIELD-EFFECT TRANSISTORS
摘要 FIELD: electricity.SUBSTANCE: device is heated by passing through it of free-form current in the open state. In the process of heating the passage of the heating current is interrupted at certain moment of time and by passing the measuring current through the device values of the heat-sensitive parameter and the case temperature are measured and recorded. Periodically values of the heating current and resultant voltage drops in the device are measured and recorded. The average power liberated by the device within the period of time is calculated. Since the time moment till the time moment the calculated average power of losses at ninterval of measurement is compared with the preset maximum permitted dissipated power for the device. When the value is less, equal or more than PMAX, the average value of the heating current is remained unchanged or decreased respectively. When the temperature of the device case reaches the preset maximum, passage of the heating current is interrupted. The measuring current is passed through the device, the heat-sensitive parameter is measured and recorded. In the mode of natural cooling, at the moment of thermodynamic equilibrium reaching, values of the heat-sensitive parameter and temperature of the device case are measured and recorded. Thermal and transient thermal resistance is calculated for the case-junction.EFFECT: improvement of accuracy, reduction of the consumed time.1 dwg
申请公布号 RU2516609(C2) 申请公布日期 2014.05.20
申请号 RU20120138818 申请日期 2012.09.10
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "MORDOVSKIJ GOSUDARSTVENNYJ UNIVERSITET IM. N.P. OGAREVA" 发明人 BESPALOV NIKOLAJ NIKOLAEVICH;LYSENKOV ALEKSEJ EVGEN'EVICH
分类号 G01R31/26 主分类号 G01R31/26
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