发明名称 |
Enhancement mode normally-off gallium nitride heterostructure field effect transistor |
摘要 |
A method of fabricating a normally“off”GaN heterostructure field effect transistor having a source and a drain including depositing a passivation layer patterned to cover a channel region between a source and a drain, forming a first opening in the passivation layer, the first opening for defining a gate area in the channel region and the first opening having a first length dimension along a direction of current flow between the source and the drain, and implanting ions in an implant area within the gate area, wherein the implant area has a second length dimension along the direction of current flow shorter than the first length dimension. |
申请公布号 |
US8728884(B1) |
申请公布日期 |
2014.05.20 |
申请号 |
US20090510687 |
申请日期 |
2009.07.28 |
申请人 |
HUSSAIN TAHIR;MICOVIC MIROSLAV;WONG WAH S.;BURNHAM SHAWN D.;HRL LABORATORIES, LLC |
发明人 |
HUSSAIN TAHIR;MICOVIC MIROSLAV;WONG WAH S.;BURNHAM SHAWN D. |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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