发明名称 |
Adaptive fin design for FinFETs |
摘要 |
A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer. |
申请公布号 |
US8728892(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113101890 |
申请日期 |
2011.05.05 |
申请人 |
OU TSONG-HUA;CHEN SHU-MIN;SUE PIN-DAI;TIEN LI-CHUN;LIU RU-GUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
OU TSONG-HUA;CHEN SHU-MIN;SUE PIN-DAI;TIEN LI-CHUN;LIU RU-GUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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