| 摘要 |
FIELD: measurement equipment.SUBSTANCE: invention relates to measurement equipment, namely, to the method to determine electroconductivity and thickness of semiconductor layer on dielectric surface, and may find application in various industries during control of properties of semiconductor layers. The proposed method includes radiation of the structure with electromagnetic radiation of microwave range, measurement of spectrum of radiation reflection from the structure in the selected frequency range at two different values of temperature Tand T, further by produced dependences they determine electroconductivity ?and ?of the semiconductor layer at two values of temperature Tand Taccordingly, then they select values of temperature from the range, in which change of concentration of charge carriers is related to ionisation of admixture centres, then they determine energy of activation of admixture centres ?W, using the ratio: ?W=2kTT[ln(?/?)]/(T-T), where k - Boltzmann constant.EFFECT: simultaneous determination of electroconductivity at lower temperatures, for instance, 180-190°K, and accordingly energy of activation of admixture centres makes it possible to determine parameters of semiconductor layer in measured structure - dielectric-semiconductor, which is the technical result.2 dwg |
