| 摘要 |
<p>The present invention relates to a method for manufacturing a phase change memory device. According to the present invention, an etch buffer layer is coated before a phase change material is buried in a narrow trench. After that, a CMP process is performed to determine the upper linewidth of the etch buffer layer. And then, the etch buffer layer coated in the trench is removed. After that, the phase change material is buried in an empty space. Thereby, the upper linewidth of the phase change material can be freely controlled and the recess of the phase change material can be minimized.</p> |
