发明名称 DRIVING DEVICE FOR INSULATED GATE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a driving device for an insulated gate semiconductor element, which parallely drives a plurality of parallely-connected IGBTs equally in a constant current and with a good current balance, and which has a simple composition.SOLUTION: A driving device for an insulated gate semiconductor element comprises: a constant current circuit for supplying a constant current to a gate of an IGBT to cause the IGBT to perform an ON operation; a discharge circuit for grounding the gate of the IGBT to cause the IGBT to perform an OFF operation; and a switching circuit for causing one of the constant current circuit and the discharge circuit to operate depending on a control signal to turn on or turn off the IGBT. In particular, the driving device comprises: a current detection circuit for detecting a current flowing in the IGBT at the time of turn on of the IGBT; and a current adjustment circuit for feeding back the current detected by the current detection circuit to the constant current circuit to control an output current of the constant current circuit in accordance with turn-on characteristics of the IGBT.
申请公布号 JP2014093836(A) 申请公布日期 2014.05.19
申请号 JP20120242242 申请日期 2012.11.01
申请人 FUJI ELECTRIC CO LTD 发明人 MORI TAKAHIRO
分类号 H02M1/08;H02M1/00 主分类号 H02M1/08
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