| 摘要 |
An array substrate and a manufacturing method thereof are provided to improve electrical and physical contact characteristic of a nano semiconductor pattern by forming a first ohmic contact pattern and a second ohmic contact pattern between a nano semiconductor pattern, and a source electrode and a drain electrode. A source electrode(111) is arranged on a substrate. A drain electrode(112) is formed on the substrate. The drain electrode faces the source electrode. A first ohmic contact pattern is formed in the upper side of the source electrode. A second ohmic contact pattern is formed in the upper side of the drain electrode. Both ends of the nano semiconductor pattern(113) are arranged in the upper sides of the first and second ohmic contact pattern. A gate insulating layer is arranged in the upper side of the nano semiconductor pattern. A gate electrode is arranged in the upper part of the gate insulating layer. |
