SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A substrate (1) is provided with a main surface (MS) having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a {111} plane in the case of cubic system. A silicon carbide layer is epitaxially formed on the main surface (MS) of the substrate. The silicon carbide layer is provided with a trench (6) having first and second side walls (20a, 20b) opposite to each other. Each of the first and second side walls (20a, 20b) includes a channel region. Further, each of the first and second side walls (20a, 20b) substantially includes one of a {0-33-8} plane and a {01-1-4} plane in the case of the hexagonal system and substantially includes a {100} plane in the case of the cubic system.