METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A mask layer is formed on a silicon carbide layer by a deposition method. The mask layer is patterned. A gate trench having a side wall is formed by removing a portion of the silicon carbide layer by etching using the patterned mask layer as a mask. A gate insulating film is formed on the side wall of the gate trench. A gate electrode is formed on the gate insulating film. The silicon carbide layer has one of hexagonal and cubic crystal types, and the side wall of the gate trench substantially includes one of a{0-33-8} plane and a {01-1-4} plane in a case where the silicon carbide layer is of hexagonal crystal type, and substantially includes a {100} plane in a case where the silicon carbide layer is of cubic crystal type.