| 摘要 |
The present invention is a method of depositing an intrinsically compressively stressed silicon nitride (SiN) or silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor using plasma enhanced chemical vapor deposition (PECVD). Exemplary amino vinylsilane-based precursors include Bis(iso-propylamino)vinylmethylsilane (BIPAVMS) and Bis(iso-propylamino)divinylsilane (BIPADVS). |
