| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality epitaxial wafer which is increased in doping uniformity, and improved in characteristics and yield.SOLUTION: An epitaxial wafer comprises: a substrate; and an epitaxial structure located on the substrate. The epitaxial structure is doped to have an n- or p-type conductivity, the doping uniformity of which is 10% or less. |
