| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a pattern by which a fine line pattern can be transferred with high accuracy by using a modified illumination method, and to provide a method for manufacturing a semiconductor device.SOLUTION: The method for producing a pattern includes an exposure step in which a reflection type mask having a multilayer film and an absorber pattern formed on a substrate is used, the reflection type mask is irradiated with EUV light by using an illumination optical system and the absorber pattern of the reflection type mask is projected onto a resist film formed on a target substrate to be processed by using a projection optical system, and the reflection type mask and the target substrate having the resist film formed thereon are synchronously scanned for exposure. The absorber pattern includes a plurality of parallel line patterns in a minimum dimension. The illumination optical system carries out modified illumination of illuminating the reflection type mask with beams in two symmetric directions around the main beam of the illumination light. In the exposure step, the scanning direction on the reflection type mask and the longitudinal direction of the line patterns in the minimum dimension are parallel to each other. |
