| 摘要 |
PROBLEM TO BE SOLVED: To suppress or prevent a fluctuation in the electrical characteristics of a semiconductor device having a through electrode.SOLUTION: In a semiconductor substrate SS, a through hole THs is formed, which penetrates between a first surface and a second surface that is on the back side of the first surface. A through electrode TVp is formed in the through hole THs. The through electrode TVp is formed by embedding a main conductor film M on the small diameter side of the through hole THs so as to form a hollow portion HS on the large diameter side of the through hole THs. An insulator film R made of resin or the like is embedded into the hollow portion HS. This structure allows stress caused by thermal expansion of the through electrode TVp to escape to the insulator film R that is softer than the semiconductor substrate SS. As a result, the stress applied from the through electrode TVp to the semiconductor substrate SS can be relaxed, and a fluctuation in the electrical characteristics of a MOSFETQ (Metal Oxide Semiconductor Field Effect Transistor) formed in the semiconductor substrate SS can be suppressed or prevented. |
