| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate in which a width of a contact hole is prevented from being increased and an electric field generating electrode is prevented from being disconnected inside the contact hole, and a method for manufacturing the thin film transistor array substrate.SOLUTION: There are provided a thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate. The thin film transistor array substrate includes: a substrate; gate lines, each including a gate pad on the substrate; a gate insulating film on the gate lines; data lines, each including a source electrode and a date pad on the gate insulating film, and a drain electrode on the gate insulating film; a first protective film on the data lines and the drain electrode; a second protective film on a part of the first protective film; and a third protective film on a part of the first protective film and the second protective film. The third protective film includes a first film and a second film disposed on the first film. An etching speed of the first protective film is about equal to or slower than an etching speed of the first film of the third protective film, and the etching speed of the first film of the third protective film is slower than an etching speed of the second film of the third protective film. |
