发明名称 HIGH FREQUENCY SWITCH CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a high frequency switch circuit that has a reduced entire area of gate bias resistors.SOLUTION: N transistors (n is an integer of two or greater) are connected in series in the order of the first to nth transistors from a first terminal to a second terminal. Nodes connected to gates of the first to nth transistors, respectively, are the first to nth nodes. N resistive elements are connected in series in the order of the first to nth resistive elements from a bias terminal to the nth node. The first resistive element is connected between the bias terminal and the first node. The k-th resistive element (k=2-n) is connected between the (k-1)th node and the k-th node.
申请公布号 JP2014093610(A) 申请公布日期 2014.05.19
申请号 JP20120242174 申请日期 2012.11.01
申请人 RENESAS ELECTRONICS CORP 发明人 MATSUNO NORIO
分类号 H03K17/687 主分类号 H03K17/687
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