| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid-state image pickup device capable of suppressing color mixture and deterioration in imaging characteristics.SOLUTION: A method for manufacturing a solid-state image pickup device according to an embodiment thins a semiconductor substrate 13, forms a plurality of masking patterns 15, and forms a V-shaped groove 16 on a rear surface of the semiconductor substrate 13. A plurality of light-receiving units 12 are provided in a lattice shape on a surface of the semiconductor substrate 13 to be thinned. A wiring layer 14 including a metal wiring 14a is also provided on the surface of the semiconductor substrate 13. The plurality of masking patterns 15 are arranged and formed in a lattice shape on a rear surface of the thinned semiconductor substrate 13. The V-shaped groove 16 is formed by etching the semiconductor substrate 13 between the masking patterns 15 with an etchant having anisotropic etching characteristics. |
