发明名称 HALF-TONE TYPE PHASE SHIFT MASK AND ITS MANUFACTURING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a half-tone type phase shift mask suppressing formation of a dimple by a side lobe while forming a seal ring, and to provide its manufacturing method and the like.SOLUTION: First of all, design data of a seal ring pattern, a basic auxiliary pattern cell and an auxiliary pattern cell for pitch adjustment is prepared. Next, a length of excessive spaces where the basic auxiliary pattern cell cannot be arranged based on an interval between the basic auxiliary pattern cell arranged at one-side corner of the seal ring and the basic auxiliary pattern cell arranged at another corner is calculated. Next, setting data for arrangement which the basic auxiliary pattern cell and the auxiliary pattern cell for pitch adjustment are arranged without leaving any gaps along the seal ring based on the length of the excessive spaces is calculated. A half-tone type phase shift mask is manufactured based on the setting data for arrangement.</p>
申请公布号 JP2014092746(A) 申请公布日期 2014.05.19
申请号 JP20120244577 申请日期 2012.11.06
申请人 RENESAS ELECTRONICS CORP 发明人 YAMAGUCHI ATSUMI
分类号 G03F1/32;G03F1/70 主分类号 G03F1/32
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