发明名称 INTEGRATED CIRCUIT AND MEMORY DEVICE
摘要 <p>A memory device comprises a boot-up control unit for controlling a boot-up operation when an initialization signal is activated and ignoring the initialization signal after activating a completion signal; a nonvolatile memory unit for storing repair data and for outputting the repair data which is stored during a boot-up operation section controlled by the boot-up control unit; multiple registers for storing the repair data outputted from the nonvolatile memory unit; multiple memory banks for replacing normal cells into redundancy cells using the repair data stored in the corresponding registers; and a verification unit for generating the completion signal which informs the completion of the boot-up operation.</p>
申请公布号 KR20140059684(A) 申请公布日期 2014.05.16
申请号 KR20120147418 申请日期 2012.12.17
申请人 SK HYNIX INC. 发明人 JEONG JEONG SU;KIM, YOUN CHEUL;YOON, HYUN SOO;KANG, YONG GU;KIM, KWI DONG;HWANG, JEONG TAE
分类号 G11C7/10;G11C7/20;G11C16/06;G11C29/00 主分类号 G11C7/10
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