发明名称 |
INTEGRATED CIRCUIT AND MEMORY DEVICE |
摘要 |
<p>A memory device comprises a boot-up control unit for controlling a boot-up operation when an initialization signal is activated and ignoring the initialization signal after activating a completion signal; a nonvolatile memory unit for storing repair data and for outputting the repair data which is stored during a boot-up operation section controlled by the boot-up control unit; multiple registers for storing the repair data outputted from the nonvolatile memory unit; multiple memory banks for replacing normal cells into redundancy cells using the repair data stored in the corresponding registers; and a verification unit for generating the completion signal which informs the completion of the boot-up operation.</p> |
申请公布号 |
KR20140059684(A) |
申请公布日期 |
2014.05.16 |
申请号 |
KR20120147418 |
申请日期 |
2012.12.17 |
申请人 |
SK HYNIX INC. |
发明人 |
JEONG JEONG SU;KIM, YOUN CHEUL;YOON, HYUN SOO;KANG, YONG GU;KIM, KWI DONG;HWANG, JEONG TAE |
分类号 |
G11C7/10;G11C7/20;G11C16/06;G11C29/00 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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