SEMICONDUCTOR ETCHING APPARATUS

摘要

A semiconductor etching apparatus according to an embodiment comprises a process chamber in which a response area is defined and response gas is supplied; an upper electrode in which predetermined power is applied and which is installed inside the process chamber; a lower electrode separated from the upper electrode and in which the predetermined power is applied to convert the response gas into a plasma condition; a chuck table installed at an upper side of the lower electrode and in which a wafer (w) is mounted; a refrigerant supply line passing through the lower electrode and the chuck table and connected to the refrigerant; and ring assembly for covering the boundary of the chuck table and for fixing the wafer (w). The ring assembly includes a focus ring for covering the boundary of the chuck table and the side of the wafer (w); a clamp ring for covering a part of the wafer (w) by being arranged on the focus ring; and a distance control unit for changing a distance between the clamp ring and the focus ring.